Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis...

GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD

A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO templatebased synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication.

Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth

Control over the location, distribution, and size of quantum dots is essential for the engineering of next-generation semiconductor devices employing these remarkable nanostructures. We describe two approaches for achieving some level of this control in the InGaAs/GaAs material system. The first allows a degree of spatial selectivity by using strain differences in patterned InGaAs thin films as...

Thermal Stability of MOCVD and HVPE GaN Layers

This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were found to obey a dissociative sublimation mechanism with only gaseous species forming, while the HVPE films reacted with ambient gases to form condensed Ga in addition to the gaseous species. Differences in crystal qual...

Properties of GaN and ZnO Quantum Dots